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Proceedings Paper

Alignment performance as a function of chemical mechanical polishing techniques and stepper optimization
Author(s): Bryan Hubbard; Albert H. Liu
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Paper Abstract

Optimized alignment for chemical mechanical polishing has been studied in detail to ascertain the best overall overlay and process conditions. This paper describes the methodology of alignment mark design and testing in conjunction with chemical mechanical polishing optimization for technologies of 0.35micrometers and below. The planarization of the substrate material by CMP combined with asymmetric metal deposition can cause linear alignment displacement. This study investigated chemical mechanical polish slurry types, hardware configuration, and process variables on general alignment conditions. Further study on alignment mark designs and photolithography stepper settings are investigated on a subset of optimized chemical mechanical polish conditions. An alignment condition where the result of less than 0.10 micrometers was obtained.

Paper Details

Date Published: 28 April 1999
PDF: 13 pages
Proc. SPIE 3741, Lithography for Semiconductor Manufacturing, (28 April 1999); doi: 10.1117/12.346882
Show Author Affiliations
Bryan Hubbard, VLSI Technology Inc. (United States)
Albert H. Liu, VLSI Technology Inc. (United States)

Published in SPIE Proceedings Vol. 3741:
Lithography for Semiconductor Manufacturing
Chris A. Mack; Tom Stevenson, Editor(s)

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