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Proceedings Paper

Assessment of a hypothetical road map that extends optical lithography through the 70-nm technology node
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Paper Abstract

This work discusses routes to extend optical lithography to the 70 nm technology node using proper selection of masks, mask design including choice of optical proximity correction (OPC), exposure tool, illuminator design, and resists design to do imaging process integration. The goal of this integration is to make each component of the imaging system work to the best benefit of the other imaging components so as to produce focus-exposure process windows large enough to use in a manufacturing environment.

Paper Details

Date Published: 28 April 1999
PDF: 17 pages
Proc. SPIE 3741, Lithography for Semiconductor Manufacturing, (28 April 1999); doi: 10.1117/12.346877
Show Author Affiliations
John S. Petersen, Petersen Advanced Lithography (United States)
Martin McCallum, SEMATECH (United States)
Nishrin Kachwala, SEMATECH (United States)
Robert John Socha, National Semiconductor Corp. (United States)
J. Fung Chen, MicroUnity Systems Engineering, Inc. (United States)
Thomas L. Laidig, MicroUnity Systems Engineering, Inc. (United States)
Bruce W. Smith, Rochester Institute of Technology (United States)
Ronald L. Gordon, FINLE Technologies Inc. (United States)
Chris A. Mack, FINLE Technologies Inc. (United States)

Published in SPIE Proceedings Vol. 3741:
Lithography for Semiconductor Manufacturing
Chris A. Mack; Tom Stevenson, Editor(s)

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