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Proceedings Paper

Use of poly test wafer volume fraction as an input to control a diffusion poly doping process
Author(s): Stephen McDade
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Paper Abstract

The process control of lightly doping polysilicon with Phosphine can be difficult. In high volume semiconductor manufacturing the equipment downtime and poor process performance associated with this type of process is expensive. Utilizing the volume fraction of the polysilicon test wafers, as measured on an ellipsometer, as input prior to dope, improvements to process performance and control as well as equipment downtime can be achieved.

Paper Details

Date Published: 23 April 1999
PDF: 7 pages
Proc. SPIE 3742, Process and Equipment Control in Microelectronic Manufacturing, (23 April 1999); doi: 10.1117/12.346247
Show Author Affiliations
Stephen McDade, Motorola Ltd. (United Kingdom)

Published in SPIE Proceedings Vol. 3742:
Process and Equipment Control in Microelectronic Manufacturing
Kevin Yallup; Murali K. Narasimhan, Editor(s)

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