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Proceedings Paper

Dry etch uniformity and optimization using graphical and DOE techniques
Author(s): John Ian Doohan; Martin Fallon; I. Thomson; Richard Boyle; J. Norval
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Paper Abstract

A uniform TEGAL 903E plasma oxide etch process, has been developed using a novel analytical technique. The process has been implemented successfully in the manufacturing arena. The novel analytical technique involves executing statistically designed experiments, then visually analyzing wafer uniformity topography maps. Modeling uniformity is usually done using a summary metric of standard deviation or normalized max-min values. This work demonstrates a weakness in this approach and presents a new strategy.

Paper Details

Date Published: 23 April 1999
PDF: 8 pages
Proc. SPIE 3742, Process and Equipment Control in Microelectronic Manufacturing, (23 April 1999); doi: 10.1117/12.346241
Show Author Affiliations
John Ian Doohan, National Semiconductor Ltd. (United Kingdom)
Martin Fallon, National Semiconductor Ltd. (United Kingdom)
I. Thomson, National Semiconductor Ltd. (United Kingdom)
Richard Boyle, National Semiconductor Ltd. (United Kingdom)
J. Norval, National Semiconductor Ltd. (United Kingdom)


Published in SPIE Proceedings Vol. 3742:
Process and Equipment Control in Microelectronic Manufacturing
Kevin Yallup; Murali K. Narasimhan, Editor(s)

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