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Proceedings Paper

In-situ UV absorption CF2 sensor for reactive ion etch process control
Author(s): Hunsuk Kim; Fred Lewis Terry Jr.
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Paper Abstract

In this article, we report the use of ultraviolet absorption spectroscopy for CF2 detection in a large area parallel plate capacitively coupled reactive ion etching system and correlation of data from this and other plasma sensors to the etch rate of SiO2 and a-Si in CF4/CHF3 plasmas. We present statistical models for estimation of a- Si etch rate in the operational regime in which the CF2 concentration is in the range of 0.4 approximately 1.6 volume % of total gas in the etch chamber. A small change in CF2 concentration translates into quite a large variation in terms of SiO2/a-Si etch selectivity, and this makes CF2 concentration a useful variable in process control. We will show statistically that silicon etch rates can be very well estimated by using sensors for CF2 and fluorine.

Paper Details

Date Published: 23 April 1999
PDF: 8 pages
Proc. SPIE 3742, Process and Equipment Control in Microelectronic Manufacturing, (23 April 1999); doi: 10.1117/12.346237
Show Author Affiliations
Hunsuk Kim, Univ. of Michigan (United States)
Fred Lewis Terry Jr., Univ. of Michigan (United States)

Published in SPIE Proceedings Vol. 3742:
Process and Equipment Control in Microelectronic Manufacturing
Kevin Yallup; Murali K. Narasimhan, Editor(s)

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