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Proceedings Paper

Development of a new defect sensitivity monitor for advanced OPC reticle technology
Author(s): Wolfgang Staud; Yair Eran; Patrick Reynolds; Craig B. Sager
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Paper Abstract

Latest trends in optical lithography will dramatically change the way we need to look at defect printability and the impact that defects have on the performance of our devices. The prediction is, that linewidth variations will have the most severe impact, causing devices to perform under specification, or at least costing the manufacturers substantial photo limited yield by having to bin die in lower speed performance bins. A mask error enhancement factor may actually make defect print more severe in certain pattern, context, and linewidth variations across the pate will cause severe problems in the device manufacturing process to maintain ACLV at an acceptable level. Having to use RET technologies, such as OPC and PSM, may actually aggravate the printability problems. In this study, a special reticle design was used to investigate defect sizes, location and permutation, to evaluate: (i) defect sensitivity and capture in an advanced reticle inspection system, (ii) printability prediction using a sophisticated wafer image simulation software package, (iii) printability of 'traditional' vs. hidden linewidth error defects, (iv) the true CD impact of a given defect on LW performance using an advanced CD-SEM.

Paper Details

Date Published: 23 April 1999
PDF: 8 pages
Proc. SPIE 3665, 15th European Conference on Mask Technology for Integrated Circuits and Microcomponents '98, (23 April 1999); doi: 10.1117/12.346227
Show Author Affiliations
Wolfgang Staud, Applied Materials (United States)
Yair Eran, Applied Materials (Israel)
Patrick Reynolds, Benchmark Technologies (United States)
Craig B. Sager, Benchmark Technologies (United States)

Published in SPIE Proceedings Vol. 3665:
15th European Conference on Mask Technology for Integrated Circuits and Microcomponents '98
Uwe F. W. Behringer, Editor(s)

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