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Proceedings Paper

Structure of the Si-SiO2 interface
Author(s): Kazimierz Jerzy Plucinski
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Paper Abstract

The band bending fluctuation and tunneling models of the anomalous dispersion of the surface-state conductance curves are analyzed, based on the result of the analysis of oxidation process.

Paper Details

Date Published: 8 April 1999
PDF: 5 pages
Proc. SPIE 3725, International Conference on Solid State Crystals '98: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology, (8 April 1999); doi: 10.1117/12.344732
Show Author Affiliations
Kazimierz Jerzy Plucinski, Military Univ. of Technology (Poland)


Published in SPIE Proceedings Vol. 3725:
International Conference on Solid State Crystals '98: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology
Antoni Rogalski; Jaroslaw Rutkowski, Editor(s)

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