Photoluminescence time resolved spectra (PL-TRS) and decay curves of photoluminescence (PL-DC) in micro- and nanosecond range at different temperatures (10 K-room) on anodically etched boron-doped silicon are presented. PL-TRS exhibit multiband structure and can be decomposed as a sum of few Gaussians. PL-DC have multiexponential shape. Relaxation times depend on wavelength of the observation. To explain our results we assumed model in which the multibarrier structure is formed by Si crystal (quantum well) surrounded by Si crystallites with diameters in the nanometer range (barrier region). The visible photoluminescence originates from radiative recombination between discrete energy levels in quantum well.

Date Published: 8 April 1999
PDF: 5 pages
Proc. SPIE 3725, International Conference on Solid State Crystals '98: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology, (8 April 1999); doi: 10.1117/12.344715

Published in SPIE Proceedings Vol. 3725:
International Conference on Solid State Crystals '98: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology
Antoni Rogalski; Jaroslaw Rutkowski, Editor(s)