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Proceedings Paper

2D VCSEL arrays for chip-level optical interconnects
Author(s): Roger King; Rainer Michalzik; Dieter Wiedenmann; Roland Jaeger; Peter Schnitzer; T. Knoedl; Karl Joachim Ebeling
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Paper Abstract

Oxide-confined vertical cavity surface-emitting laser diodes (VCSELs) are fabricated for applications in chip-level optical interconnects. 980 nm wavelength devices in arrays with 4 by 8 elements are investigated. Threshold voltages of 1.5 V and operation voltages below 2V of submilliamp threshold current lasers are fully comparable to 3.3 V CMOS technology. Modulation bandwidths of 9.5 GHz at 1.8 mA laser current with a modulation current efficiency factor of 10 GHz/(root)mA is demonstrated for 3 micrometers diameter VCSELs. No error floors are observed down to bit error rates of 10-11 at 12.5 Gb/s data transmission. VCSEL based top illuminated resonant cavity enhanced photodetectors show peak efficiencies of 50 percent combined with full spectral half-widths of 5 nm.

Paper Details

Date Published: 13 April 1999
PDF: 10 pages
Proc. SPIE 3632, Optoelectronic Interconnects VI, (13 April 1999); doi: 10.1117/12.344625
Show Author Affiliations
Roger King, Univ. Ulm (Germany)
Rainer Michalzik, Univ. Ulm (Germany)
Dieter Wiedenmann, Univ. Ulm (Germany)
Roland Jaeger, Univ. Ulm (Germany)
Peter Schnitzer, Univ. Ulm (Germany)
T. Knoedl, Univ. Ulm (Germany)
Karl Joachim Ebeling, Univ. Ulm (Germany)

Published in SPIE Proceedings Vol. 3632:
Optoelectronic Interconnects VI
Julian P. G. Bristow; Suning Tang, Editor(s)

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