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Proceedings Paper

Materials and process issues in the fabrication of high-performance HgCdTe infrared detectors
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Paper Abstract

Mechanisms of incorporation of native defect and dopants in HgCdTe alloys are reviewed. Origin of the native defect related deep centers in limiting the minority carrier lifetime is explored. Primary and secondary mechanisms operative in the activation of n type and p type dopants in HgCdTe are discussed along with implications for fabrication of high performance detectors.

Paper Details

Date Published: 7 April 1999
PDF: 7 pages
Proc. SPIE 3629, Photodetectors: Materials and Devices IV, (7 April 1999); doi: 10.1117/12.344589
Show Author Affiliations
Honnavalli R. Vydyanath, Avyd Devices, Inc. (United States)
Vaidya Nathan, Air Force Research Lab. (United States)
Latika S. R. Becker, U.S. Army Space and Missile Defense Command (United States)
Gary N. Chambers, U.S. Army Space and Missile Defense Command (United States)

Published in SPIE Proceedings Vol. 3629:
Photodetectors: Materials and Devices IV
Gail J. Brown; Manijeh Razeghi, Editor(s)

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