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Proceedings Paper

Demonstration of InAsSb/AlInSb double-heterostructure detectors for room temperature operation in the 5- to 8-um wavelength range
Author(s): Joseph S. Wojkowski; Hooman Mohseni; Jedon D. Kim; Manijeh Razeghi
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Paper Abstract

We report the first demonstration of InAsSb/AlInSb double heterostructure detectors for room temperature operation. The structures were grown in a solid source molecular beam epitaxy reactor on semi-insulating GaAs substrate. The material was processed to 400 X 400 micrometer mesas using standard photolithography, etching, and metallization techniques. No optical immersion or surface passivation was used. The photovoltaic detectors showed a cutoff wavelength at 8 micrometer at 300 K. The devices showed a high quantum efficiency of 40% at 7 micrometer at room temperature. A responsivity of 300 mA/W was measured at 7 micrometer under a reverse bias of 0.25 V at 300 K resulting in a Johnson noise limited detectivity of 2 X 108 cmHz1/2/W.

Paper Details

Date Published: 7 April 1999
PDF: 7 pages
Proc. SPIE 3629, Photodetectors: Materials and Devices IV, (7 April 1999); doi: 10.1117/12.344573
Show Author Affiliations
Joseph S. Wojkowski, Northwestern Univ. (United States)
Hooman Mohseni, Northwestern Univ. (United States)
Jedon D. Kim, Northwestern Univ. (United States)
Manijeh Razeghi, Northwestern Univ. (United States)

Published in SPIE Proceedings Vol. 3629:
Photodetectors: Materials and Devices IV
Gail J. Brown; Manijeh Razeghi, Editor(s)

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