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Proceedings Paper

High-speed high-efficiency resonant-cavity-enhanced photodiodes
Author(s): Ekmel Ozbay; Ibrahim Kimukin; Necmi Biyikli; Orhan Aytur; Mutlu Goekkavas; Goekhan Ulu; M. Selim Unlu; Richard P. Mirin; Kristine A. Bertness; David H. Christensen; Elias Towe; Gary Tuttle
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Paper Abstract

In this paper, we review our research efforts on RCE high- speed high-efficiency p-i-n and Schottky photodiodes. Using a microwave compatible planar fabrication process, we have designed and fabricated GaAs based RCE photodiodes. For RCE Schottky photodiodes, we have achieved a peak quantum efficiency of 50% along with a 3-dB bandwidth of 100 GHz. The tunability of the detectors via a recess etch is also demonstrated. For p-i-n type photodiodes, we have fabricated and tested widely tunable devices with near 100% quantum efficiencies, along with a 3-dB bandwidth of 50 GHz. Both of these results correspond to the fastest RCE photodetectors published in scientific literature.

Paper Details

Date Published: 7 April 1999
PDF: 9 pages
Proc. SPIE 3629, Photodetectors: Materials and Devices IV, (7 April 1999); doi: 10.1117/12.344566
Show Author Affiliations
Ekmel Ozbay, Bilkent Univ. (Turkey)
Ibrahim Kimukin, Bilkent Univ. (Turkey)
Necmi Biyikli, Bilkent Univ. (Turkey)
Orhan Aytur, Bilkent Univ. (Turkey)
Mutlu Goekkavas, Boston Univ. (United States)
Goekhan Ulu, Boston Univ. (United States)
M. Selim Unlu, Boston Univ. (United States)
Richard P. Mirin, National Institute of Standards and Technology (United States)
Kristine A. Bertness, National Institute of Standards and Technology (United States)
David H. Christensen, National Institute of Standards and Technology (United States)
Elias Towe, Univ. of Virginia (United States)
Gary Tuttle, Iowa State Univ. (United States)

Published in SPIE Proceedings Vol. 3629:
Photodetectors: Materials and Devices IV
Gail J. Brown; Manijeh Razeghi, Editor(s)

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