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Proceedings Paper

High-performance InSb/In1-xAlxSb focal plane detector arrays grown by MBE
Author(s): Andrew D. Johnson
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Paper Abstract

Results are presented for indium antimonide/indium aluminum antimonide (InSb/InAlSb) diodes grown by molecular beam epitaxy (MBE) for infrared detector applications. By lowering the substrate growth temperature during epitaxy it is possible to increase the dopant activation, both n and p-type. In addition, the Shockley-Read trap density is reduced by a factor X5 to approximately 2 X 1013 cm-3 and the defect density in the MBE grown material falls to approximately 25 cm-2. The application of these diodes with improved performance to 2D infrared detector arrays with enhanced detectivities operating at higher temperatures will be described. Conventional 2D arrays that operate at 80 K have also been fabricated. Typical noise equivalent temperature difference (NETD) is less than 10 mK for a 1.5 msec stare time.

Paper Details

Date Published: 7 April 1999
PDF: 10 pages
Proc. SPIE 3629, Photodetectors: Materials and Devices IV, (7 April 1999); doi: 10.1117/12.344565
Show Author Affiliations
Andrew D. Johnson, Defence Evaluation and Research Agency Malvern (United Kingdom)


Published in SPIE Proceedings Vol. 3629:
Photodetectors: Materials and Devices IV
Gail J. Brown; Manijeh Razeghi, Editor(s)

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