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Proceedings Paper

Characteristics of a superlattice infrared detector and comparison with QWIP
Author(s): Mao-Chieh Hsu; Y.F. Hsu; Kuan H. Chen
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Paper Abstract

A 15-period GaAs/Al0.3Ga0.7As superlattice infrared photodetector (SLIP) is presented. A 1500 Angstrom wide Al0.22Ga0.78As blocking barrier is introduced to reduce the dark current. The measured noise power spectral density of dark current at 77 K shows characteristics of in2 equals 2qId rather than the generation-recombination noise. The spectral response is between 8 - 10 micrometer with (lambda) p equals 9.3 micrometer. Background limited performance can be achieved up to 65 K. Assuming the noise of background photocurrent to be 2qIpc, we estimate D*BLIP equals 1.5 X 1010 cm(root)Hz/W. At 77 K, the detectivity is D* equals 3.5 X 109cm(root)Hz/W with the bias voltage of 0.1 V. In comparison with conventional QWIPS, our SLIP has the advantage of higher performance at low bias voltage and lower power consumption.

Paper Details

Date Published: 7 April 1999
PDF: 8 pages
Proc. SPIE 3629, Photodetectors: Materials and Devices IV, (7 April 1999); doi: 10.1117/12.344550
Show Author Affiliations
Mao-Chieh Hsu, National Taiwan Univ. (Taiwan)
Y.F. Hsu, National Taiwan Univ. (Taiwan)
Kuan H. Chen, National Taiwan Univ. (United States)

Published in SPIE Proceedings Vol. 3629:
Photodetectors: Materials and Devices IV
Gail J. Brown; Manijeh Razeghi, Editor(s)

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