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Proceedings Paper

Diode lasers with Al-free quantum wells embedded in LOC AlGaAs waveguides between 715 nm and 840 nm
Author(s): Goetz Erbert; Frank Bugge; Arne Knauer; Juergen Maege; Andrea Oster; Juergen Sebastian; R. Staske; A. Thies; Hans Wenzel; Marcus Weyers; Guenther Traenkle
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Paper Abstract

In this paper, we present results on diode lasers in the wavelength range between 715 nm and 840 nm with Al-free QWs which are embedded in a high-quality AlGaAs LOC broadened waveguide structure with low optical loss and a small vertical far field divergence. The laser structures were grown by LP- MOVPE. We studied tensile-strained GaAsP-QWs as well as compressively strained InGaAsP-QWs with strain compensating barriers. For lasers with GaAsP QWs, the lowest transparency current densities of about 130 A/cm2 were obtained in the wavelength range between 750 nm and 800 nm. Very low transparency current densities were achieved with InGaAsP-QWs at wavelengths above 800 nm. At 810 nm, high output powers (100 micrometer aperture) of about 7 W was achieved with both types of QWs from devices mounted epi up. However, with respect to high temperature operation and reliability tensile- strained GaAsP QWs seem to be the better choice, especially for the wavelength range below 760 nm.

Paper Details

Date Published: 1 April 1999
PDF: 10 pages
Proc. SPIE 3628, In-Plane Semiconductor Lasers III, (1 April 1999); doi: 10.1117/12.344535
Show Author Affiliations
Goetz Erbert, Ferdinand-Braun-Institut fuer Hoechstfrequenztechnik (Germany)
Frank Bugge, Ferdinand-Braun-Institut fuer Hoechstfrequenztechnik (Germany)
Arne Knauer, Ferdinand-Braun-Institut fuer Hoechstfrequenztechnik (Germany)
Juergen Maege, Ferdinand-Braun-Institut fuer Hoechstfrequenztechnik (Germany)
Andrea Oster, Ferdinand-Braun-Institut fuer Hoechstfrequenztechnik (Germany)
Juergen Sebastian, Ferdinand-Braun-Institut fuer Hoechstfrequenztechnik (Germany)
R. Staske, Ferdinand-Braun-Institut fuer Hoechstfrequenztechnik (Germany)
A. Thies, Ferdinand-Braun-Institut fuer Hoechstfrequenztechnik (Germany)
Hans Wenzel, Ferdinand-Braun-Institut fuer Hoechstfrequenztechnik (Germany)
Marcus Weyers, Ferdinand-Braun-Institut fuer Hoechstfrequenztechnik (Germany)
Guenther Traenkle, Ferdinand-Braun-Institut fuer Hoechstfrequenztechnik (Germany)


Published in SPIE Proceedings Vol. 3628:
In-Plane Semiconductor Lasers III
Hong K. Choi; Peter S. Zory, Editor(s)

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