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Proceedings Paper

High-brightness flared lasers
Author(s): Mats Hagberg; Stephen O'Brien; Bardia Pezeshki; Ed Veil; Bo Lu; Robert J. Lang
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Paper Abstract

A variety of applications continue to demand semiconductor lasers with higher brightness. These applications include printing, marking, frequency-doubling, sensing, and free-space communication, as well as pumps for fiber-amplifiers and solid-state laser crystals. The traditional narrow-stripe single-mode laser is limited in power to 200 - 400 mW due to the small mode volume and high optical intensity at the mirrors. The traditional broad-area laser can deliver higher power but with a significantly larger aperture-divergence product. The key to very high-brightness lasers is to increase the output power without increasing the aperture-divergence product. Numerous concepts have been proposed, of which several have been demonstrated. As of today, only two types of broad-area single-spatial-mode lasers are commercially available; flared-amplifier lasers and angled-grating distributed-feedback ((alpha) -DFB) lasers. Near-diffraction- limited powers of 5 W and 1.6 W have been reported for these lasers, respectively. This paper will review properties of flared-amplifier lasers in several different configurations.

Paper Details

Date Published: 1 April 1999
PDF: 8 pages
Proc. SPIE 3628, In-Plane Semiconductor Lasers III, (1 April 1999);
Show Author Affiliations
Mats Hagberg, SDL, Inc. (United States)
Stephen O'Brien, SDL, Inc. (United States)
Bardia Pezeshki, SDL, Inc. (United States)
Ed Veil, SDL, Inc. (United States)
Bo Lu, SDL, Inc. (United States)
Robert J. Lang, SDL, Inc. (United States)

Published in SPIE Proceedings Vol. 3628:
In-Plane Semiconductor Lasers III
Hong K. Choi; Peter S. Zory, Editor(s)

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