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Proceedings Paper

High-optical-intensity 2D AlGaAs laser arrays
Author(s): Yuji Nishikawa; Hiroshi Takigawa
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Paper Abstract

High power diode laser arrays have been demonstrated using relatively simple manufactured water-cooled packages. The layer structure of the graded-index separate confinement heterostructure (GRIN-SCH) using AlGaAs material systems were employed for the 0.8 micrometer-emission. The laser bars have broad-area stripes (70 micrometer) with a pitch of 150 micrometer and a cavity length of 500 micrometer. A maximum power of 40 W per 1-cm-laser-bar was obtained for the layer structure with 10-nm-thick quantum well. We stack 15 laser bar modules (laser block) and fabricated two-dimensional laser arrays with 45 laser bars, consisting of 3 laserblocks. The total output power is about 680 W, which corresponds to an intensity of about 110 W/cm2. The reliability data of 200- W laser blocks are shown to be about 5000 hours extrapolated by 2000 hours' data.

Paper Details

Date Published: 1 April 1999
PDF: 9 pages
Proc. SPIE 3628, In-Plane Semiconductor Lasers III, (1 April 1999); doi: 10.1117/12.344516
Show Author Affiliations
Yuji Nishikawa, Fujitsu Labs. Ltd. (Japan)
Hiroshi Takigawa, Fujitsu Labs. Ltd. (Japan)

Published in SPIE Proceedings Vol. 3628:
In-Plane Semiconductor Lasers III
Hong K. Choi; Peter S. Zory, Editor(s)

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