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Proceedings Paper

Preparation and characterization of erbium-doped sol-gel silica glasses
Author(s): Hongbing Lei; Qingqing Yang; Haiyan Ou; Buwen Chen; Jinzhong Yu; Qiming Wang; Datao Xie; JinGuang Wu; Duan-Fu Xu; Guang-Xian Xu
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Paper Abstract

Erbium-doped silica glasses were made by sol-gel process. Intensive photoluminescence (PL) spectra from the Er-doped silica glasses at room temperature were measured. A broadband peak at 1535 nm, corresponding to the 4I13/2-4I15/2 transition, its full width at half- maximum (FWHM) of 10 nm, and a shoulder at 1546 nm in the PL spectra were observed. At lower temperatures, main line of 1535 nm and another line of 1552 nm instead of 1546 nm appear. So two types of luminescence centers must exist in the samples at different temperature. The intensity of main line does not decrease obviously with increasing temperature. By varying the Er ion concentration in the range of 0.2 wt% - 5 wt%, the highest photoluminescence intensity was obtained at 0.2 wt% erbium doped concentration. Luminescence intensity decreases with increasing erbium concentration. Cooperative upconversion was used to explain the concentration quenching of luminescence from silica glass with high erbium concentration. Extended x-ray absorption fine structure measurements were carried out. It was found that the majority of the erbium impurities in the glasses have a local structure of eight first neighbor oxygen atoms at a mean distance of 0.255 nm, which is consistent with the typical coordination structure of rare earth ion.

Paper Details

Date Published: 1 April 1999
PDF: 7 pages
Proc. SPIE 3622, Rare-Earth-Doped Materials and Devices III, (1 April 1999); doi: 10.1117/12.344494
Show Author Affiliations
Hongbing Lei, Institute of Semiconductors (China)
Qingqing Yang, Institute of Semiconductors (China)
Haiyan Ou, Institute of Semiconductors (China)
Buwen Chen, Institute of Semiconductors (China)
Jinzhong Yu, Institute of Semiconductors (China)
Qiming Wang, Institute of Semiconductors (China)
Datao Xie, Peking Univ. (China)
JinGuang Wu, Peking Univ. (China)
Duan-Fu Xu, Peking Univ. (China)
Guang-Xian Xu, Peking Univ. (China)

Published in SPIE Proceedings Vol. 3622:
Rare-Earth-Doped Materials and Devices III
Shibin Jiang; Seppo Honkanen, Editor(s)

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