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Proceedings Paper

Time-resolved photoluminescence measurements of InGaN light-emitting diodes, films, and multiple quantum wells
Author(s): Milan Pophristic; Frederick H. Long; Chuong A. Tran; Ian T. Ferguson; Robert F. Karlicek Jr.
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Paper Abstract

We have used time-resolved photoluminescence (PL) to examine light-emitting diodes made of InGaN/GaN multiple quantum wells (MQWs) before the final stages of processing. The time-resolved photoluminescence from a dim MQW was quenched by nonradiative recombination centers. The PL kinetics from a bright MQW were not single exponential but stretched exponential, with the stretch parameter (beta) equals 0.59 +/- 0.05. The emission lifetime varied with energy, within error (beta) was independent of the emission energy. The stretched exponential kinetics are consistent with significant disorder in the material. Related results for an InGaN film and InGaN/GaN MQWs are also reported. We attribute the disorder to fluctuations of the local indium concentration.

Paper Details

Date Published: 14 April 1999
PDF: 9 pages
Proc. SPIE 3621, Light-Emitting Diodes: Research, Manufacturing, and Applications III, (14 April 1999); doi: 10.1117/12.344489
Show Author Affiliations
Milan Pophristic, Rutgers Univ. (United States)
Frederick H. Long, Rutgers Univ. (United States)
Chuong A. Tran, Emcore Corp. (United States)
Ian T. Ferguson, Emcore Corp. (United States)
Robert F. Karlicek Jr., Emcore Corp. (United States)

Published in SPIE Proceedings Vol. 3621:
Light-Emitting Diodes: Research, Manufacturing, and Applications III
E. Fred Schubert; Ian T. Ferguson; H. Walter Yao, Editor(s)

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