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Proceedings Paper

Growth and characterization of high-efficiency InGaN MQW blue and green LEDs from large-scale-production MOCVD reactors
Author(s): Chuong A. Tran; Robert F. Karlicek Jr.; Michael G. Brown; Ivan Eliashevich; Alexander Gurary; Richard A. Stall
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Paper Abstract

As more advances are made in the performance of GaN-based devices, a trend toward the use of large scale MOCVD reactors for epitaxial growth of GaN-based device structures is clear. In this paper we describe the use of Emcore's SpectraBlueTM reactor for large-scale manufacturing of Blue and Green LEDs. The high throughput growth of GaN based LEDs is demonstrated without compromising LED uniformity or overall performance. In-situ control of key parameters critical to the production of high quality LEDs, such as buffer layer growth is now feasible using in-situ reflectance spectroscopy. Film properties as well as LED device performance are discussed.

Paper Details

Date Published: 14 April 1999
PDF: 7 pages
Proc. SPIE 3621, Light-Emitting Diodes: Research, Manufacturing, and Applications III, (14 April 1999); doi: 10.1117/12.344487
Show Author Affiliations
Chuong A. Tran, Emcore Corp. (United States)
Robert F. Karlicek Jr., Emcore Corp. (United States)
Michael G. Brown, Emcore Corp. (United States)
Ivan Eliashevich, Emcore Corp. (United States)
Alexander Gurary, Emcore Corp. (United States)
Richard A. Stall, Emcore Corp. (United States)

Published in SPIE Proceedings Vol. 3621:
Light-Emitting Diodes: Research, Manufacturing, and Applications III
E. Fred Schubert; Ian T. Ferguson; H. Walter Yao, Editor(s)

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