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Proceedings Paper

Solid-source molecular beam epitaxy growth and characteristics of resonant cavity light-emitting diodes
Author(s): Mika J. Saarinen; Seppo Orsila; Mika Toivonen; Pekka Savolainen; Tiina E. Kuuslahti; Ville Vilokkinen; Petri Melanen; Pekko Sipilae; Markus Pessa
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Paper Abstract

We report on resonant cavity light-emitting diodes, operating at 660, 880, and 1300 nm wavelengths. Some of the characteristic features of these devices will be discussed. The devices were grown by all-solid-source molecular beam epitaxy (SSMBE). The results provide clear-cut evidence that SSMBE is a viable method to growth of phosphorous containing semiconductors.

Paper Details

Date Published: 14 April 1999
PDF: 7 pages
Proc. SPIE 3621, Light-Emitting Diodes: Research, Manufacturing, and Applications III, (14 April 1999); doi: 10.1117/12.344482
Show Author Affiliations
Mika J. Saarinen, Tampere Univ. of Technology (Finland)
Seppo Orsila, Tampere Univ. of Technology (Finland)
Mika Toivonen, Tampere Univ. of Technology (Finland)
Pekka Savolainen, Tampere Univ. of Technology (Finland)
Tiina E. Kuuslahti, Tampere Univ. of Technology (Finland)
Ville Vilokkinen, Tampere Univ. of Technology (Finland)
Petri Melanen, Tampere Univ. of Technology (Finland)
Pekko Sipilae, Tampere Univ. of Technology (Finland)
Markus Pessa, Tampere Univ. of Technology (Finland)

Published in SPIE Proceedings Vol. 3621:
Light-Emitting Diodes: Research, Manufacturing, and Applications III
E. Fred Schubert; Ian T. Ferguson; H. Walter Yao, Editor(s)

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