The n-CuInS₂ crystals were grown from the In-rich melt of Cu, In, and S compounds using the Bridgman method. The crystals were grown at two different cooling rates (crystals I and II). The crystals I show two types of temperature dependence of the electron mobility related to different temperature ranges ((mu) _o approximately T^3/2 and (mu) _o approximately T^3/2) connected with the impurities and phonons scattering of electrons. The electron mobility of the crystals I is independent of the illumination with white light. On the other hand, the crystals II show strong temperature dependence of the electron mobility ((mu) _o approximately T^5/2), which changes drastically its character ((mu) approximately T^3/2) when illuminated with white light.

Date Published: 24 March 1999
PDF: 5 pages
Proc. SPIE 3724, International Conference on Solid State Crystals '98: Single Crystal Growth, Characterization, and Applications, (24 March 1999); doi: 10.1117/12.343005

Published in SPIE Proceedings Vol. 3724:
International Conference on Solid State Crystals '98: Single Crystal Growth, Characterization, and Applications
Andrzej Majchrowski; Jerzy Zielinski, Editor(s)