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Proceedings Paper

High-temperature solution growth of oxide single crystals
Author(s): Andrzej Majchrowski
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Paper Abstract

High temperature solution growth of oxide single crystals has become very useful method in investigations of new classes of materials for opto-electronics. In this paper applicability of this method, its advantages, and disadvantages have been discussed. Investigations of crystallization of several oxides such as mixed sillenites Bi12Ti1-xMxO20 (M equals Pb, Ga, V), double tungstates (K1-xCsxDy(WO4)2 and KGd(WO4)2:Nd), and borates (CsLiB6O10 and YAl3(BO3)4:Nd) carried out by this technique have been described.

Paper Details

Date Published: 24 March 1999
PDF: 4 pages
Proc. SPIE 3724, International Conference on Solid State Crystals '98: Single Crystal Growth, Characterization, and Applications, (24 March 1999); doi: 10.1117/12.342984
Show Author Affiliations
Andrzej Majchrowski, Military Univ. of Technology (Poland)


Published in SPIE Proceedings Vol. 3724:
International Conference on Solid State Crystals '98: Single Crystal Growth, Characterization, and Applications
Andrzej Majchrowski; Jerzy Zielinski, Editor(s)

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