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Proceedings Paper

Indium-doped Cd0.8Mn0.2Te: DLTS study
Author(s): Jan Szatkowski; Ewa Placzek-Popko; K. Sieranski; A. Hajdusianek; Piotr Becla
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Paper Abstract

Recently increasing interest in In or Ga doped CdMnTe, ternary semimagnetic semiconducting compound, has been observed due to the persistent photoconductivity (PPC) effect observed in the material and subsequently possible application of the material as volume holographic gratings. DX-like centers existing in the material are responsible for the PPC effect: they exhibit shallow-deep metastability due to strong interaction with surrounding lattice. DX centers have been observed in In doped CdTe, CdMnTe and CdMnTeSe. In this paper we present our results of DLTS study in indium doped Cd0.8Mn0.2Te. In the material five electron traps designated by us as E1-E5 were observed with activation energies equal to 0.23 eV, 0.28 eV, 0.38 eV, 0.48 eV, and 0.65 eV, respectively. For one of them, E3, a very strong temperature dependence of capture cross section is observed. Therefore related defects exhibit large lattice relaxation which can be responsible for the photomemory effect observed in the material.

Paper Details

Date Published: 24 March 1999
PDF: 6 pages
Proc. SPIE 3724, International Conference on Solid State Crystals '98: Single Crystal Growth, Characterization, and Applications, (24 March 1999); doi: 10.1117/12.342980
Show Author Affiliations
Jan Szatkowski, Technical Univ. of Wroclaw (Poland)
Ewa Placzek-Popko, Technical Univ. of Wroclaw (Poland)
K. Sieranski, Technical Univ. of Wroclaw (Poland)
A. Hajdusianek, Technical Univ. of Wroclaw (Poland)
Piotr Becla, Massachusetts Institute of Technology (United States)

Published in SPIE Proceedings Vol. 3724:
International Conference on Solid State Crystals '98: Single Crystal Growth, Characterization, and Applications
Andrzej Majchrowski; Jerzy Zielinski, Editor(s)

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