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Proceedings Paper

Photosensitivity of As-S-based chalcogenide photoresists in the recording of relief phase holograms
Author(s): Rudolf R. Gerke; Mikhail D. Mikhailov; Igor Y. Yusupov
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Paper Abstract

The photosensitivity of AsxSb(Ge)yS100-x-y (x equals 35 - 45, y equals 0 - 6) films to light with wavelength 488 nm was investigated. The value of photosensitivity was quantified using the results of chemical etching in amine solutions for as-deposited and exposed films. It was found the exposure required to obtain the optimal relief depth, which is from 0.1 to 0.3 micrometer for holographic gratings, decreases with both sulfur and antimony content from about 2 J/cm2 for As2S3 to about 0.3 J/cm2 for As30Sb4S66. The photosensitivity of the Ge doped films is sharp decreased with Ge content. A model of effect of additives on the change of dissolution kinetics was proposed. It is based on the consideration of a photopolymerization of films leading to the formation of the insoluble network of AsS3/2 structural units.

Paper Details

Date Published: 23 March 1999
PDF: 8 pages
Proc. SPIE 3638, Holographic Materials V, (23 March 1999); doi: 10.1117/12.342812
Show Author Affiliations
Rudolf R. Gerke, S.I. Vavilov State Optical Institute (Russia)
Mikhail D. Mikhailov, Corning Scientific Ctr./St. Petersburg (Finland)
Igor Y. Yusupov, Holograte JSC (Russia)

Published in SPIE Proceedings Vol. 3638:
Holographic Materials V
T. John Trout, Editor(s)

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