Share Email Print

Proceedings Paper

Mid-infrared silicon/germanium focal plane detector arrays
Author(s): Hartmut Presting; Johannes Konle; Markus Hepp; Horst Kibbel; Klaus Thonke; Rolf Sauer; Wolfgang A. Cabanski; Milan Jaros
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

Highly p-doped silicon/silicon-germanium (Si/SiGe) quantum well (QW) structures have been grown by molecular beam epitaxy (MBE) on <100> Si substrates for mid-infrared (3(mu) - 5(mu) ; 8(mu) - 12(mu) ) detection. These detectors operate at 77 K and are based on hetero-internal photoemission (HIP) of holes from a highly p-doped SiGe quantum well into a undoped silicon layer. They are grown on weakly-doped (50(Omega) cm), double-sided polished Si substrate on which the highly p-doped Si1-xGex wells (p++ approximately 5 1020cm-3) are deposited. The Ge content, doping level and the well width determine the operating wavelength. The samples have been characterized by secondary ion mass spectroscopy (SIMS), X-ray diffraction, and absorption measurements. Single mesa detectors as well as large area focal plane arrays (FPA) with 256 X 256 pixels have been fabricated from these samples using standard Si integrated processing techniques. Dark- and photocurrents have been measured at 77 K and up to 225 K. Broad photoresponse curves with peak external quantum efficiencies up to 0.5% have been measured at 77 K and 4$u. Detectivities in excess of 2 1010 cm(root)Hz/W have been obtained. We demonstrate that by varying the well design of the SiGe HIP detectors by means of Ge-content, doping and Ge gradients in double and stacked multi-wells the photoresponse peak and the shape of the spectrum can be tuned over a wide wavelength range. The fabricated 256 X 256 Si/SiGe FPA array has a pixel size of 21 X 21(mu) 2 and a pitch of 24(mu) . The mesa detectors diameters range from 1 mm down to 125(mu) . The epitaxial versatility and the compatibility of the Si/SiGe array fabrication compared to the existing silicide fabrication process demonstrates the advantages of the SiGe system in comparison over commercially used silicide detectors.

Paper Details

Date Published: 19 March 1999
PDF: 17 pages
Proc. SPIE 3630, Silicon-based Optoelectronics, (19 March 1999); doi: 10.1117/12.342804
Show Author Affiliations
Hartmut Presting, DaimlerChrysler Research Ctr. (Germany)
Johannes Konle, Univ. Ulm (Germany)
Markus Hepp, Univ. Ulm (Germany)
Horst Kibbel, DaimlerChrysler Research Ctr. (Germany)
Klaus Thonke, Univ. Ulm (Germany)
Rolf Sauer, Univ. Ulm (Germany)
Wolfgang A. Cabanski, AEG Infrarot-Module GmbH (Germany)
Milan Jaros, Univ. of Newcastle upon Tyne (United Kingdom)

Published in SPIE Proceedings Vol. 3630:
Silicon-based Optoelectronics
Derek C. Houghton; Eugene A. Fitzgerald, Editor(s)

© SPIE. Terms of Use
Back to Top
Sign in to read the full article
Create a free SPIE account to get access to
premium articles and original research
Forgot your username?