Share Email Print

Proceedings Paper

Si/Si1-xGex waveguide components for WDM demultiplexing
Author(s): Siegfried Janz; Dan-Xia Xu; Jean-Marc Baribeau; Andre Delage; Robin L. Williams
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

We report on the development of building blocks of Si/Si1- xGex/Si planar waveguide WDM circuits -- an optical splitter/combiner and the first demonstration of an Si/Si1- xGex/Si arrayed waveguide grating (AWG) demultiplexer. The prototype AWG is a four channel device with a 400 GHz ((Delta) (lambda) equals 2.3 nm) channel spacing, and operates in the 1300 nm wavelength range. Strain and refractive index in the Si1-xGex epilayers play a critical role in device performance. The AWG waveguide heterostructure has total Si1-xGex layer thickness well beyond the measured critical thickness for lattice relaxation, but is stabilized against dislocation formation by the insertion of Si capping layers during growth. Single mode curved ridge waveguides formed from this material show no obvious bend losses for radii of curvature as small as 4 mm.

Paper Details

Date Published: 19 March 1999
PDF: 9 pages
Proc. SPIE 3630, Silicon-based Optoelectronics, (19 March 1999); doi: 10.1117/12.342798
Show Author Affiliations
Siegfried Janz, National Research Council Canada (Canada)
Dan-Xia Xu, National Research Council Canada (Canada)
Jean-Marc Baribeau, National Research Council Canada (Canada)
Andre Delage, National Research Council Canada (Canada)
Robin L. Williams, National Research Council Canada (Canada)

Published in SPIE Proceedings Vol. 3630:
Silicon-based Optoelectronics
Derek C. Houghton; Eugene A. Fitzgerald, Editor(s)

© SPIE. Terms of Use
Back to Top
Sign in to read the full article
Create a free SPIE account to get access to
premium articles and original research
Forgot your username?