Share Email Print

Proceedings Paper

Leakage current reduction of metal-semiconductor-metal photodetectors by using a thin interfacial silicon dioxide layer
Author(s): Myron Seto; C. Rochefort; S. de Jager
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

In this report, we show that a thin interfacial silicon dioxide layer placed between the Schottky metal and the silicon substrate reduces the leakage current of a metal- semiconductor-metal photodetector. We find the optimal interfacial oxide layer to be about 3 or 4 nm thick and is made by dry furnace oxidation of the silicon substrate at 800 degrees Celsius, taken from a 0.18 micrometer CMOS process normally used to make the gate oxide. As compared to a metal- semiconductor-metal detector without this oxide layer, we measure a factor 5 reduction in leakage current density to 18 (mu) A/cm2 at 5 V, a weaker increase in dark current with bias, and a factor 3 improvement in photoresponsivity to 0.35 A/W at 635 nm wavelength. Additionally, we compare Schottky barrier height, effective Richardson constant, and capacitance measurements between photodetectors made with and without this interfacial oxide.

Paper Details

Date Published: 19 March 1999
PDF: 9 pages
Proc. SPIE 3630, Silicon-based Optoelectronics, (19 March 1999);
Show Author Affiliations
Myron Seto, Philips Research Labs. (Netherlands)
C. Rochefort, Philips Research Labs. (Netherlands)
S. de Jager, Philips Research Labs. (Netherlands)

Published in SPIE Proceedings Vol. 3630:
Silicon-based Optoelectronics
Derek C. Houghton; Eugene A. Fitzgerald, Editor(s)

© SPIE. Terms of Use
Back to Top
Sign in to read the full article
Create a free SPIE account to get access to
premium articles and original research
Forgot your username?