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Proceedings Paper

Simulation studies of a -SiC-on-insulator Pockels phase modulator
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Paper Abstract

We have designed waveguide modulators using (beta) -SiC-on- insulator waveguides and the Pockels effect. A 2D semiconductor device simulator was used to determine the electric field configuration in a double-Schottky diode structure. This allowed us to evaluate the local modulation of the refractive index as a function of applied external bias and to determine the effective index modulation of the guided mode. The optical simulations were performed using the Spectral Index and the Effective Index methods. Different 2D geometries are analyzed and the material parameters needed for fabricating such a device are determined. Application to Mach- Zehnder intensity modulators is described. Such devices have potential for high-speed Si-based photonic devices compatible with silicon technology.

Paper Details

Date Published: 19 March 1999
PDF: 10 pages
Proc. SPIE 3630, Silicon-based Optoelectronics, (19 March 1999); doi: 10.1117/12.342782
Show Author Affiliations
Adrian P. Vonsovici, Univ. of Surrey (United Kingdom)
Graham T. Reed, Univ. of Surrey (United Kingdom)
Alan G. R. Evans, Univ. of Southampton (United Kingdom)

Published in SPIE Proceedings Vol. 3630:
Silicon-based Optoelectronics
Derek C. Houghton; Eugene A. Fitzgerald, Editor(s)

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