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Proceedings Paper

Defect localization in CuInSe2 solar modules by thermal infrared microscopy
Author(s): Werner Gross; H. Scheuerpflug; Juergen Zettner; Thomas Hierl; Max J. Schulz; Franz Karg
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Paper Abstract

In this paper the IR Microscopy Thermosensoric Defect Localization method ((mu) -TDL) is presented. This technique is based on a novel IR microscopy lens which permits to take IR images with a spatial resolution of better than 10 micrometer, which is close to the theoretical limit. The (mu) -TDL method is demonstrated on defective CuInSe2 solar modules consisting of several solar cells serially interconnected and having solar efficiencies considerably below the average. By using the accurate localization of the defects by the (mu) -TDL method further investigations were performed and the origin for the defect was found. The (mu) -TDL method is also applicable to solar cells and modules consisting of other materials, such as amorphous Si or CdTe. The (mu) TDL method is suitable for the solar module development as well as for non- destructive production control.

Paper Details

Date Published: 19 March 1999
PDF: 7 pages
Proc. SPIE 3700, Thermosense XXI, (19 March 1999); doi: 10.1117/12.342276
Show Author Affiliations
Werner Gross, Bavarian Ctr. for Applied Energy Research (Germany)
H. Scheuerpflug, Bavarian Ctr. for Applied Energy Research (Germany)
Juergen Zettner, Thermosensorik GmbH (Germany)
Thomas Hierl, Thermosensorik GmbH (Germany)
Max J. Schulz, Bavarian Ctr. for Applied Energy Research (Germany) and Univ. of Erlangen-Nuernberg (Germany)
Franz Karg, Siemens Solar GmbH (Germany)

Published in SPIE Proceedings Vol. 3700:
Thermosense XXI
Dennis H. LeMieux; John R. Snell Jr., Editor(s)

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