This paper present the results from the investigation of the chemical anisotropic etching of single-crystal silicon in the following solutions: KOH, K₃[Fe(CN)₆] 0.1M, K₄[Fe(CH)₆] 3H₂O 0.1M, KNO₃ 0.1M and/or complexant added. The complexants added in KOH solution were: Calix(4)arenes, Phenols and Ether Dibenzo 18 Crown 6. The result using also NaOH or LiOH H₂O and complexants are presented. The reaction mechanism and the hillocks formation and elimination are analyzed. The results allow us to use the redox system and/or the organic complexants, to monitor the etching process, to obtain a smooth silicon surface, almost free of hillocks, to utilize the usual mask material resistant at the new etchants.

Date Published: 10 March 1999
PDF: 12 pages
Proc. SPIE 3680, Design, Test, and Microfabrication of MEMS and MOEMS, (10 March 1999); doi: 10.1117/12.341176

Published in SPIE Proceedings Vol. 3680:
Design, Test, and Microfabrication of MEMS and MOEMS
Bernard Courtois; Wolfgang Ehrfeld; Selden B. Crary; Wolfgang Ehrfeld; Hiroyuki Fujita; Jean Michel Karam; Karen W. Markus, Editor(s)