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Proceedings Paper

Molecular beam epitaxial growth of BSCCO and Bi-based oxides: self-limiting growth of the Bi element
Author(s): Shigeki Sakai; S. Migita; Hiroyuki Ota; H. Fujino; Yuji Kasai; Tsunehiro Oohira; H. Matsuhata; Koji Kajimura
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Paper Abstract

Self-limiting function of Bi element in connection with experimental results of sticking coefficients of constituent atoms of BSCCO is described. Molecular beam epitaxial growth of Bi2Sr2CuOx (Bi2201) and Bi4Ti3O12 (BIT) is demonstrated using this function. A further advanced method and its growth results for Bi2Sr2CaCu2Ox (Bi2212) and Bi2Sr2Ca2Cu3Ox (Bi2223) growth are shown, where a chemical reaction between Bi2201 molecular layer and one or two monolayers of Ca and Cu deposited on Bi2201 is used. Estimation by means of X-ray diffraction, reflection high-energy electron diffraction, and atomic force microscopy shows excellent quality of the films obtained. Heteroepitaxial growth of BIT/Bi2201 using the self- limiting function of Bi is also done.

Paper Details

Date Published: 22 December 1998
PDF: 11 pages
Proc. SPIE 3481, Superconducting and Related Oxides: Physics and Nanoengineering III, (22 December 1998); doi: 10.1117/12.335872
Show Author Affiliations
Shigeki Sakai, Electrotechnical Lab. (Japan)
S. Migita, Electrotechnical Lab. (Japan)
Hiroyuki Ota, Electrotechnical Lab. (Japan)
H. Fujino, Electrotechnical Lab. (Japan)
Yuji Kasai, Electrotechnical Lab. (Japan)
Tsunehiro Oohira, Electrotechnical Lab. (Japan)
H. Matsuhata, Electrotechnical Lab. (Japan)
Koji Kajimura, Electrotechnical Lab. (Japan)

Published in SPIE Proceedings Vol. 3481:
Superconducting and Related Oxides: Physics and Nanoengineering III
Davor Pavuna; Ivan Bozovic, Editor(s)

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