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Proceedings Paper

DC Kerr coefficient of silica: theory and experiment
Author(s): Alice C. Liu; Michel J. F. Digonnet; Gordon S. Kino
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Paper Abstract

We report the first measurement of the frequency and polarization dependence of the low-frequency third-order nonlinear susceptibility (chi) (3)(-(omega) ;(omega) ,0,0) of silica. In the frequency range tested (0.5 - 19 MHz), we observed sharp resonances with a complex dependence on polarization. Observations are quantitatively well explained by a theoretical model that assumes the presence of two contributions to (chi) (3), namely the Kerr effect and electrostriction. The model shows that our measurements are consistent with (1) a DC Kerr constant of 1.9 X 10-22 m2/V2 with a 3:1 polarization dependence, comparable to the Kerr constant at optical frequencies, and (2) an electrostriction modulation that is greatly enhanced by mechanical resonances of the sample and exhibits a polarization dependence of 2.3:1, in agreement with an elasto-optic model. This work suggests new means of producing a low-voltage, high-frequency phase modulator by operating at a fundamental resonance of the structure. It also lends credence to the general belief that DC rectification does not fully account for the large second- order nonlinearity that occurs in poled silica.

Paper Details

Date Published: 21 December 1998
PDF: 6 pages
Proc. SPIE 3542, Doped Fiber Devices II, (21 December 1998); doi: 10.1117/12.333764
Show Author Affiliations
Alice C. Liu, Stanford Univ. (United States)
Michel J. F. Digonnet, Stanford Univ. (United States)
Gordon S. Kino, Stanford Univ. (United States)

Published in SPIE Proceedings Vol. 3542:
Doped Fiber Devices II
Michel J. F. Digonnet; Francois Ouellette, Editor(s)

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