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Proceedings Paper

Some challenges for mask making to keep up with the roadmap
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Paper Abstract

This paper discuses the need for additional mask quality factors for implementation into a further roadmap. These factors are expected to affect the printed image on wafer. Especially the global idea of pattern fidelity is introduced. Low voltage scanning electron microscopy can offer the capability to mask makers to deliver this extra information. This knowledge should lead to a better understanding how mask imperfections may contribute to the overall lithography error budget. This understanding will need to rely on stronger collaboration between mask maker and mask user. Using simulation data and the so-called mask error factor, it is shown that certain mask strategies may allow larger mask error budgets.

Paper Details

Date Published: 18 December 1998
PDF: 12 pages
Proc. SPIE 3546, 18th Annual BACUS Symposium on Photomask Technology and Management, (18 December 1998); doi: 10.1117/12.332839
Show Author Affiliations
Rik M. Jonckheere, IMEC (Belgium)
John N. Randall, Texas Instruments Inc. (United States)
Thomas Marschner, IMEC (Germany)
Kurt G. Ronse, IMEC (Belgium)

Published in SPIE Proceedings Vol. 3546:
18th Annual BACUS Symposium on Photomask Technology and Management
Brian J. Grenon; Frank E. Abboud, Editor(s)

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