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Proceedings Paper

Comparison of single- and dual-exposure phase-shift mask approaches for polygate patterning
Author(s): Richard E. Schenker
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Paper Abstract

Single, multi-phase, and dual, 'hidden-shifter,' phase shift masks are compared via simulation and experiment in terms of line-end patterning fidelity and printability of phase defects. Four phase mask line-ends bend through focus while 'hidden-shifter' line-ends show acceptable performance. For a given phase difference, phase defects are found to be more severe than phase errors in terms of resist CD variations. Phase defect printability is highest at positive defocus. For a typical process window, 60 degree phase defects as small as 100 nm may cause unacceptable CD variations.

Paper Details

Date Published: 18 December 1998
PDF: 11 pages
Proc. SPIE 3546, 18th Annual BACUS Symposium on Photomask Technology and Management, (18 December 1998); doi: 10.1117/12.332832
Show Author Affiliations
Richard E. Schenker, Intel Corp. (United States)

Published in SPIE Proceedings Vol. 3546:
18th Annual BACUS Symposium on Photomask Technology and Management
Brian J. Grenon; Frank E. Abboud, Editor(s)

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