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Proceedings Paper

Pellicle-induced reticle distortion: an experimental investigation
Author(s): Wen Chen; James A. Carroll; Glenn Storm; Ronald G. Ivancich; John P. Maloney; Olivier Maurin; Eric Souleillet
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Paper Abstract

As semiconductor design rules decrease in size, total overlay performance requires a higher standard of the stepper and the photomask which affords a smaller error budget to each. Currently, photomask overlay assessment is done prior to pellicle attachment. However, the physical act of attaching a pellicle to a photomask imparts mechanical stress that distorts the reticle plane and changes the actual pattern placement from the design intent. With the advent of metrology tools capable of through-pellicle registration measurement, we are now able to assess and better characterize the effect pelliclization has on reticle distortion. The focus of this experimental investigation has been to quantify the incremental reticle distortion attributed to attaching the pellicle. To assess pellicle-induced distortion, both pattern registration and reticle flatness were evaluated. Two pellicle gasket materials were evaluated and one of the two materials was found to produce less reticle distortion. Relaxation of pellicle-induced reticle distortion after the pellicle is attached is also discussed.

Paper Details

Date Published: 18 December 1998
PDF: 6 pages
Proc. SPIE 3546, 18th Annual BACUS Symposium on Photomask Technology and Management, (18 December 1998); doi: 10.1117/12.332822
Show Author Affiliations
Wen Chen, DuPont Photomasks, Inc. (United States)
James A. Carroll, DuPont Photomasks, Inc. (United States)
Glenn Storm, DuPont Photomasks, Inc. (United States)
Ronald G. Ivancich, DuPont Photomasks, Inc. (United States)
John P. Maloney, DuPont Photomasks, Inc. (United States)
Olivier Maurin, DuPont Photomasks (France)
Eric Souleillet, DuPont Photomasks (France)

Published in SPIE Proceedings Vol. 3546:
18th Annual BACUS Symposium on Photomask Technology and Management
Brian J. Grenon; Frank E. Abboud, Editor(s)

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