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Proceedings Paper

Charge injection from indium tin oxide into a starburst amine and its implications for organic light-emitting diodes
Author(s): Homer Antoniadis; Carsten Giebeler; Donal D. C. Bradley; Yasuhiko Shirota
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Paper Abstract

We have investigated the hole injection characteristics from indium tin oxide (ITO) into 4,4',4''-tris[N,-(3- methylphenyl)-N-phenylamino] triphenylamine (m-MTDATA) and have measured the hole carrier drift mobility of this compound in single-layer ITO/m-MTDATA/Au structures. We have found that ITO is able to provide trap-free space-charge- limited currents over a wide range of film thicknesses and have established unambiguously that the ITO/m-MTDATA is an ideal ohmic contact at high electric fields. The drift mobility of the m-MTDATA molecular glass was found to be electric field dependent and a negative field dependence was detected at fields lower than 1 by 105 V/cm. Our observations clarify the role of m-MTDATA as a voltage- lowering hole-injecting buffer layer in organic light- emitting diodes.

Paper Details

Date Published: 16 December 1998
PDF: 8 pages
Proc. SPIE 3476, Organic Light-Emitting Materials and Devices II, (16 December 1998); doi: 10.1117/12.332607
Show Author Affiliations
Homer Antoniadis, Hewlett-Packard Co. (United States)
Carsten Giebeler, Hewlett-Packard Co. and Univ. of Sheffield (United States)
Donal D. C. Bradley, Univ. of Sheffield (United Kingdom)
Yasuhiko Shirota, Osaka Univ. (Japan)

Published in SPIE Proceedings Vol. 3476:
Organic Light-Emitting Materials and Devices II
Zakya H. Kafafi, Editor(s)

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