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Proceedings Paper

High-power coherent semiconductor laser design operating in the IR region
Author(s): Asu Ram Jha
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Paper Abstract

Diode-pumped solid state (DPSS) lasers employing diode arrays and optical crystals suffer from excessive weight, low conversion efficiency, and high fabrication cost. This paper reveals a unique design of coherent, high performance InGaAsP/InP strained-layer quantum-well (QW) semiconductor laser capable of delivering CW power output greater than 500 mw at 1.55 microns. It is important to mention that InGaAsP/InP strained-layer double-quantum-well (DQW) laser diodes are capable of yielding even higher optical power output with improved differential quantum efficiency (DQE) and with lower threshold current at 20 deg C. Compact packaging, minimum power consumption, eye-safe operation and minimum cost are the major benefits of this laser design.

Paper Details

Date Published: 13 November 1998
PDF: 7 pages
Proc. SPIE 3465, Millimeter and Submillimeter Waves IV, (13 November 1998); doi: 10.1117/12.331144
Show Author Affiliations
Asu Ram Jha, Jha Technical Consulting Services (United States)

Published in SPIE Proceedings Vol. 3465:
Millimeter and Submillimeter Waves IV
Mohammed N. Afsar, Editor(s)

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