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Proceedings Paper

Light emission in silicon-germanium at 1.54 um using erbium luminescence
Author(s): Md. Quamrul Huda; A. R. Peaker
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Paper Abstract

The rare earth element erbium has been incorporated in silicon-germanium strained quantum well structures by ion implantation. A dopant concentration of 1018/cm3 was obtained through the process of amorphization and solid phase epitaxial regrowth. The incorporated erbium atoms were found to be electronically active producing luminescence at 1.54 micrometer from the characteristic 4I13/2 yields 4I15/2 transition. Photoluminescence spectra of the specimens were found to be entirely dominated by atomically sharp, strong erbium signal without any contribution from band-edge or quantum well emission. The erbium luminescence was found to be temperature dependent, reducing exponentially with temperature with an activation energy of 120 meV. This energy was shown to correspond to the position of the erbium related level from the conduction band.

Paper Details

Date Published: 13 November 1998
PDF: 6 pages
Proc. SPIE 3465, Millimeter and Submillimeter Waves IV, (13 November 1998); doi: 10.1117/12.331138
Show Author Affiliations
Md. Quamrul Huda, Bangladesh Univ. of Engineering and Technology (Bangladesh)
A. R. Peaker, Univ. of Manchester Institute of Science and Technology (United Kingdom)

Published in SPIE Proceedings Vol. 3465:
Millimeter and Submillimeter Waves IV
Mohammed N. Afsar, Editor(s)

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