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Proceedings Paper

Present status of ArF lithography development and mask technology
Author(s): Hiroaki Morimoto; Hiroshi Ohtsuka
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Paper Abstract

It has been proved that the ArF lithography have a potential for 0.13 micrometers -rule production. Further application of OPC, PSM, and TSI have the possibility to enhance the ArF technology to 0.1 micrometers rule. Further research for ArF scanner, resist, process integration, resolution enhancement technologies, and photomask technology is necessary to bring ArF lithography in production use. In Selete, research program of ArF lithography has been started. The overview of Selete program is presented. This program is based on the collaboration with vendors of equipment, substrate, resist, mask, et al.

Paper Details

Date Published: 1 September 1998
PDF: 3 pages
Proc. SPIE 3412, Photomask and X-Ray Mask Technology V, (1 September 1998); doi: 10.1117/12.328844
Show Author Affiliations
Hiroaki Morimoto, Semiconductor Leading Edge Technologies, Inc. (Japan)
Hiroshi Ohtsuka, Semiconductor Leading Edge Technologies, Inc. (Japan)

Published in SPIE Proceedings Vol. 3412:
Photomask and X-Ray Mask Technology V
Naoaki Aizaki, Editor(s)

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