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Proceedings Paper

Optimization of Zr-Si compound films for attenuated PSM
Author(s): Takashi Haraguchi; Tadashi Matsuo; Susumu Takeuchi
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Paper Abstract

This paper reports optimization of Zirconium-Silicon-Oxide (ZrSiO) films for attenuated phase shift mask (Att.PSM) concerning Zr/Si compound ratio. ZrSiO films were deposited by RF magnetron co-sputtering in Ar mixed with O2 gas using separated dual cathode of Zr and Si. Researched were the relationships between chemical durabilities, optical property, and Zr/Si compound ratio determined with XPS analysis. As a result, it was confirmed that controllability of optical property, chemical durabilities, and spectroscopic property would be improved by optimizing Zr/Si compound ratio. Consequently, by composing appropriate optical constants and thickness of bi-layer ZrSiO films, various transmitting Att.PSM can be obtained.

Paper Details

Date Published: 1 September 1998
PDF: 4 pages
Proc. SPIE 3412, Photomask and X-Ray Mask Technology V, (1 September 1998); doi: 10.1117/12.328843
Show Author Affiliations
Takashi Haraguchi, Toppan Printing Co., Ltd. (Japan)
Tadashi Matsuo, Toppan Printing Co., Ltd. (Japan)
Susumu Takeuchi, Toppan Printing Co., Ltd. (Japan)

Published in SPIE Proceedings Vol. 3412:
Photomask and X-Ray Mask Technology V
Naoaki Aizaki, Editor(s)

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