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Proceedings Paper

High-transmittance rim-type attenuated phase-shift masks for sub-0.2-um hole patterns
Author(s): Haruo Iwasaki; Keiichi Hoshi; Hiroyoshi Tanabe
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Paper Abstract

The lithographic performance of high- and standard- transmittance attenuated phase shift masks (PSMs) was investigated in order to determine the suitability of applying attenuated PSMs to the fabrication of 0.15-micrometers hole patterns. Both PSMs had rim structures to eliminate side lobes, and they have two layers on the quartz substrate: a chromium-fluoride attenuated phase shifter layer and an opaque chromium layer. Both PSMs had similar lithographic performances that were high enough for 0.15 micrometers hole patterns.

Paper Details

Date Published: 1 September 1998
PDF: 8 pages
Proc. SPIE 3412, Photomask and X-Ray Mask Technology V, (1 September 1998); doi: 10.1117/12.328842
Show Author Affiliations
Haruo Iwasaki, NEC Corp. (Japan)
Keiichi Hoshi, NEC Corp. (Japan)
Hiroyoshi Tanabe, NEC Corp. (Japan)

Published in SPIE Proceedings Vol. 3412:
Photomask and X-Ray Mask Technology V
Naoaki Aizaki, Editor(s)

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