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Proceedings Paper

High-density plasma dry etch for DUV attenuated phase-shifting masks
Author(s): Song Peng; William J. Adair
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Paper Abstract

Attenuated phase-shifting masks have gained wide acceptance in the manufacturing environment during the last few years. Etching attenuated films remains a challenging process step that affects several critical mask parameters including critical dimension (CD) and phase angle. This paper reports the result of etching MoSi attenuated phase-shifting materials using an inductively coupled plasma system. CD and phase-control performance is presented as well as a performance comparison between ICP and reactive ion etching. Attenuated PSMs have typically been used primarily for contact-type patterns. However, recent lithographic simulation result show significant benefits of attenuated PSM with off-axis illumination for gate-type patterns. Fabrication of gate-type attenuated PSMs introduces new challenges for the etch process. Initial etch performance result are also presented.

Paper Details

Date Published: 1 September 1998
PDF: 5 pages
Proc. SPIE 3412, Photomask and X-Ray Mask Technology V, (1 September 1998); doi: 10.1117/12.328811
Show Author Affiliations
Song Peng, IBM Microelectronics Div. (United States)
William J. Adair, IBM Microelectronics Div. (United States)

Published in SPIE Proceedings Vol. 3412:
Photomask and X-Ray Mask Technology V
Naoaki Aizaki, Editor(s)

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