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Proceedings Paper

Impact on mask technology from the viewpoint of DRAM trend
Author(s): Kuniaki Koyama
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Paper Abstract

The development of DRAM is currently in transition from a 0.25 micrometers design rule for 256Mbit DRAM to a 0.18 micrometers design rule for 1 Gbit DRAM. There are five important points to improving mask technology for DRAM fabrication below 0.18 micrometers design rule. One is good CD linearity between mask pattern size and design pattern size with minimal pattern size and density dependence. Second is high defect inspection sensitivity and good repair capability in PSM and OPC mask patterns, any angle patterns, and contact patterns, because printing pattern defects are caused not only by mask defects but also by limitations of lithographic resolution. Third is a small minimum address size which needs to be below 0.005 micrometers for memory cell design. Fourth is large reticle size which should be greater than the current 6- inches for multi-die reticles. The fifth and final point is new pellicle material research which is needed for ArF lithography.

Paper Details

Date Published: 1 September 1998
PDF: 8 pages
Proc. SPIE 3412, Photomask and X-Ray Mask Technology V, (1 September 1998); doi: 10.1117/12.328805
Show Author Affiliations
Kuniaki Koyama, NEC Corp. (Japan)

Published in SPIE Proceedings Vol. 3412:
Photomask and X-Ray Mask Technology V
Naoaki Aizaki, Editor(s)

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