Polarization controllable semiconductor optical waveguide material/devices have been design and studied using different type of strained quantum well heterostructures in the active region of the waveguide. A phase modulator devices has demonstrated a linear relative phase shift between the TE and TM polarizations with a V_(pi ) of approximately 4 V. Another electro-absorption waveguide modulator structure has shown a bias tunable polarization mode so that the polarization properties can be actively controlled. We are also developing a monolithic integration techniques using selective epitaxial growth to achieve band gap variation within the same wafer and therefore, fabric integrated passive and active waveguide systems without high cost regrowth or device coupling.

Date Published: 4 December 1998
PDF: 4 pages
Proc. SPIE 3491, 1998 International Conference on Applications of Photonic Technology III: Closing the Gap between Theory, Development, and Applications, (4 December 1998);

Published in SPIE Proceedings Vol. 3491:
1998 International Conference on Applications of Photonic Technology III: Closing the Gap between Theory, Development, and Applications
George A. Lampropoulos; Roger A. Lessard, Editor(s)