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Proceedings Paper

Light emission in silicon nanostructures
Author(s): David J. Lockwood
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Paper Abstract

Interest in obtaining useful light emission from silicon- based materials has never been greater. This is because there is a strong demand for optoelectronic devices based on silicon and also because there has recently been significant progress in materials engineering methods. Here we review the latest developments in this work, which is aimed at overcoming the indirect band gap limitations in light emission from silicon. One promising new approach, based on thin-layer Si/SiO2 superlattices, is reviewed in detail. The incorporation of these different materials into devices is described and future device prospects are assessed.

Paper Details

Date Published: 4 December 1998
PDF: 9 pages
Proc. SPIE 3491, 1998 International Conference on Applications of Photonic Technology III: Closing the Gap between Theory, Development, and Applications, (4 December 1998); doi: 10.1117/12.328603
Show Author Affiliations
David J. Lockwood, National Research Council Canada (Canada)


Published in SPIE Proceedings Vol. 3491:
1998 International Conference on Applications of Photonic Technology III: Closing the Gap between Theory, Development, and Applications
George A. Lampropoulos; Roger A. Lessard, Editor(s)

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