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Proceedings Paper

New infrared and other applications of narrow-gap semiconductors
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Paper Abstract

The use of multilayer heterostructures based on the narrow-gap semiconductor materials InSb/InAlSb and HgCdTe is leading to a range of IR and other devices which can operate without cooling. Work in DERA will be reviewed which has demonstrated uncooled detectors out to 12 micrometer; uncooled infrared LEDs for the 3 - 12 micrometer region, employing either positive or negative luminescence; diode injection lasers with output between 3.9 micrometer and 5.1 micrometer (operating up to 150 k); and uncooled very high speed, very low voltage transistors.

Paper Details

Date Published: 26 October 1998
PDF: 13 pages
Proc. SPIE 3436, Infrared Technology and Applications XXIV, (26 October 1998); doi: 10.1117/12.328075
Show Author Affiliations
Charles Thomas Elliott, Defence Evaluation and Research Agency Malvern (United Kingdom)

Published in SPIE Proceedings Vol. 3436:
Infrared Technology and Applications XXIV
Bjorn F. Andresen; Marija Strojnik, Editor(s)

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