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Proceedings Paper

Current status and technology of the HgCdTe IR detector in Korea
Author(s): Jae Mook Kim; Hocheol Lee; Sang-Hee Suh
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Paper Abstract

The progress and current status of HgCdTe infrared detector in Korea during the last ten years is reviewed and future perspectives of infrared detector research and development are also given. The research and development of HgCdTe infrared detector was started in 1987. In the first five years, we had focused on the material growth, especially liquid phase epitaxy (LPE) by slider method and single element MWIR photovoltaic detector with large active area was realized with this LPE material. After that, the development of the linear array infrared detectors including photoconductive and photovoltaic devices was initiated and will be finished very soon. During this period we developed the travelling heater method (THM) for the use of the linear arrays. On the other hand MBE growth of HgCdTe was started for a specific applications and MOVPE process was employed for the two-color infrared development. Focal plane array program will be initiated very soon.

Paper Details

Date Published: 26 October 1998
PDF: 10 pages
Proc. SPIE 3436, Infrared Technology and Applications XXIV, (26 October 1998); doi: 10.1117/12.328030
Show Author Affiliations
Jae Mook Kim, Agency for Defense Development (South Korea)
Hocheol Lee, Korea Advanced Institute of Science and Technology (United States)
Sang-Hee Suh, Korea Institute of Science and Technology (South Korea)

Published in SPIE Proceedings Vol. 3436:
Infrared Technology and Applications XXIV
Bjorn F. Andresen; Marija Strojnik, Editor(s)

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