Share Email Print
cover

Proceedings Paper

Phase-change optical disk with nitride interface layers
Author(s): Noboru Yamada; Mayumi Otoba; Kenichi Nagata; Shige-aki Furukawa; Kenji Narumi; Nobuo Akahira; Fumiaki Ueno
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

Two marked effects are obtained by forming a Ge-N interface layer on either side of Ge-Sb-Te recording layer. One effect is a suppression of atomic diffusion between Ge-Sb-Te layer and protective layers, ZnS-SiO2 representatively, which leads to a significant improvement in overwrite cyclability, and the other is the acceleration of crystallization process which leads to higher speed optical disks. A rapid-cooling type experimental disk with Ge-N layers on both sides of the Ge-Sb-Te recording layer proved to be capable of exceeding 105 cycle overwrites and a recording data rate 40 Mbps at linear velocity 12 m/s. The recording conditions: bit length 0.28 micrometer and track pitch 0.6 micrometer (L/G method) using laser source with a wavelength 658 nm and a numerical aperture 0.6 correspond to a capacity 4.7 GB/(phi) 120 mm.

Paper Details

Date Published: 23 October 1998
PDF: 9 pages
Proc. SPIE 3401, Optical Data Storage '98, (23 October 1998); doi: 10.1117/12.327913
Show Author Affiliations
Noboru Yamada, Matsushita Electric Industrial Co., Ltd. (Japan)
Mayumi Otoba, Matsushita Electric Industrial Co., Ltd. (Japan)
Kenichi Nagata, Matsushita Electric Industrial Co., Ltd. (Japan)
Shige-aki Furukawa, Matsushita Electric Industrial Co., Ltd. (Japan)
Kenji Narumi, Matsushita Electric Industrial Co., Ltd. (Japan)
Nobuo Akahira, Matsushita Electric Industrial Co., Ltd. (Japan)
Fumiaki Ueno, Matsushita Electric Industrial Co., Ltd. (Japan)


Published in SPIE Proceedings Vol. 3401:
Optical Data Storage '98
Shigeo R. Kubota; Tomas D. Milster; Paul J. Wehrenberg, Editor(s)

© SPIE. Terms of Use
Back to Top