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Proceedings Paper

Self-mode-locked semiconductor diode laser
Author(s): Patrick Langlois; Michel Piche
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Paper Abstract

We report on the generation of picosecond pulses from a self-mode-locked semiconductor diode laser. The active medium is an InGaAs amplifier whose gain curve extends from 830 to 870 nm. The facets of the amplifier are cut at angle (5 degrees). The amplifier is inserted in a ring cavity with no other component but mirrors and lenses. Mode locking is entirely passive and it takes place when the laser is operated slightly above threshold and misaligned. Trains of counterpropagating pulses are produced, with pulse durations varying from 2 to 5 ps. The counterpropagating pulses have different spectra, with a wavelength difference up to 7 nm. The pulse repetition rate could be adjusted from 0.8 to 6.4 GHz. We discuss the possibility that some nonlinear mechanisms may give rise to the mode-locking action.

Paper Details

Date Published: 8 October 1998
PDF: 6 pages
Proc. SPIE 3415, Laser Diodes and Applications III, (8 October 1998); doi: 10.1117/12.326625
Show Author Affiliations
Patrick Langlois, COPL/Univ. Laval (Canada)
Michel Piche, COPL/Univ. Laval (Canada)

Published in SPIE Proceedings Vol. 3415:
Laser Diodes and Applications III
Pierre Galarneau, Editor(s)

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